Job Title: Sr. Process Engineer - GaN RF
Job Location: Must be willing to relocate to Xiamen, China or Munich, Germany
Compensation: $150K - $200K+ base Depending on Experience
Requirements: Wafer Process Engineering, GaN HEMT, GaN Device Modeling, Device Characterization
Our company provides world-class wafer foundry services for III-V compound semiconductors and offers high quality processes with exceptional service. We are now expanding our Wide Bandgap (WBG) Power Electronics business (SiC and GaN). We offer a wide choice in foundry services for WBG power devices, including SiC MOSFET, SiC Schottky Barrier Diode (SBD), and GaN E-mode HEMT with different voltage rating for a full complement of traditional Si based devices. We also follow a comprehensive qualification process for our power devices to ensure a reliable operation in various applications (e.g., consumer, industrial and automotive).
Our Headquarters is based in Xiamen, China, but we also have a design center in Munich, Germany. Candidates can work out of either location.
Top Reasons to Work with Us
1) Competitive Compensation ($150K - $200K+ base salary plus bonus depending on experience and track record)
2) Comprehensive benefits package including medical coverage and bonus.
3) Career growth with a path to management level, leading the local engineering team.
4) Stable environment with a start-up like upside potential (our company falls under the umbrella of a public company with a $17 Billion USD market cap)
What You Will Be Doing
Candidate will be responsible for direct hands-on development of GaN HEMT device-related processes and technologies to support volume production in GaN RF business. Responsiblities include:
- Responsible for the development of key processes and process integration into the wafer fab, like thin film, plasma etching, photolithography, e-beam lithography and advanced processes, according to customer and product/technology requirements
- Responsible for GaN device modeling, simulation, electrical testing and analysis;
- Responsible for the architecture design, development, and qualification of new GaN HEMT devices and technologies;
- Process development, integration, reliability test to achieve the target technology functionalities & performance, reliability, yield, quality, and cost;
- GaN device design (using TCAD tools as well as layout-tools, i.e. layout), test chip design, collaborating in setting up and running process experiments, extensive electrical and physical characterization, as well as data analysis and reporting, throughout an Agile process of iterations (learning cycles) to achieve all set targets.
What You Need for this Position
Bachelor's Degree in Electrical Engineering, Microelectronics, Material Physics or similar (Master's or PhD preferred) with at least 3+ years experience with:
- Gallium Nitride (GaN) related device development
- III-V process development
- Knowledge of GaN HEMT Device physics and process impact to device performance and reliability
- GaN device characterization and metrology
So, if you are a Sr. Process Engineer with GaN RF experience, please apply today! or send an updated copy of your resume to Mike.Vandenbergh@CyberCoders.com for immediate consideration!
Applicants must be authorized to work in the U.S.
Email me to apply for this position